PMXB65ENE Specs and Replacement

Type Designator: PMXB65ENE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.067 Ohm

Package: DFN1010D-3

PMXB65ENE substitution

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PMXB65ENE datasheet

 ..1. Size:254K  nxp
 pmxb65ene.pdf pdf_icon

PMXB65ENE

PMXB65ENE 30 V, N-channel Trench MOSFET 20 May 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Leadless ultra small and thin SMD plastic package 1.1 ... See More ⇒

 8.1. Size:250K  nxp
 pmxb65upe.pdf pdf_icon

PMXB65ENE

PMXB65UPE 12 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package... See More ⇒

Detailed specifications: PMV65XPEA, PMV75UP, PMXB120EPE, PMXB350UPE, PMXB360ENEA, PMXB40UNE, PMXB43UNE, PMXB56EN, STP65NF06, PMXB65UPE, PMXB75UPE, PMZ1200UPE, PMZ130UNE, PMZ200UNE, PMZ290UN, PMZ290UNE, PMZ290UNE2

Keywords - PMXB65ENE MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.