PMXB65ENE MOSFET. Datasheet pdf. Equivalent
Type Designator: PMXB65ENE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 3.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 40 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.067 Ohm
Package: DFN1010D-3
PMXB65ENE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMXB65ENE Datasheet (PDF)
pmxb65ene.pdf
PMXB65ENE30 V, N-channel Trench MOSFET20 May 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Leadless ultra small and thin SMD plastic package: 1.1
pmxb65upe.pdf
PMXB65UPE12 V, P-channel Trench MOSFET8 July 2014 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package
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