All MOSFET. PMXB65UPE Datasheet

 

PMXB65UPE Datasheet and Replacement


   Type Designator: PMXB65UPE
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.317 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 3.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 167 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm
   Package: DFN1010D-3
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PMXB65UPE Datasheet (PDF)

 ..1. Size:250K  nxp
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PMXB65UPE

PMXB65UPE12 V, P-channel Trench MOSFET8 July 2014 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package

 8.1. Size:254K  nxp
 pmxb65ene.pdf pdf_icon

PMXB65UPE

PMXB65ENE30 V, N-channel Trench MOSFET20 May 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Leadless ultra small and thin SMD plastic package: 1.1

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History: FCH041N60E | HLML6401 | AOWF9N70 | SI3443DVTR | NVD6415AN | SI3590DV | AP85T03GH-HF

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