PMXB75UPE Datasheet and Replacement
Type Designator: PMXB75UPE
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.317 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 2.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 75 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: DFN1010D-3
PMXB75UPE substitution
PMXB75UPE Datasheet (PDF)
pmxb75upe.pdf
PMXB75UPE20 V, P-channel Trench MOSFET8 July 2014 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package
Datasheet: PMXB120EPE , PMXB350UPE , PMXB360ENEA , PMXB40UNE , PMXB43UNE , PMXB56EN , PMXB65ENE , PMXB65UPE , 7N60 , PMZ1200UPE , PMZ130UNE , PMZ200UNE , PMZ290UN , PMZ290UNE , PMZ290UNE2 , PMZ320UPE , PMZ350UPE .
History: FRK250D
Keywords - PMXB75UPE MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: FRK250D
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