All MOSFET. PMXB75UPE Datasheet

 

PMXB75UPE Datasheet and Replacement


   Type Designator: PMXB75UPE
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.317 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 2.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: DFN1010D-3
 

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PMXB75UPE Datasheet (PDF)

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PMXB75UPE

PMXB75UPE20 V, P-channel Trench MOSFET8 July 2014 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package

Datasheet: PMXB120EPE , PMXB350UPE , PMXB360ENEA , PMXB40UNE , PMXB43UNE , PMXB56EN , PMXB65ENE , PMXB65UPE , MMIS60R580P , PMZ1200UPE , PMZ130UNE , PMZ200UNE , PMZ290UN , PMZ290UNE , PMZ290UNE2 , PMZ320UPE , PMZ350UPE .

History: STU8NM50N | WMK15N60C4 | NCE0157A | TK13J65U | 2SK4201-S19-AY | CEP12P10 | WFP12N65S

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