PMXB75UPE Specs and Replacement

Type Designator: PMXB75UPE

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.317 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: DFN1010D-3

PMXB75UPE substitution

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PMXB75UPE datasheet

 ..1. Size:251K  nxp
 pmxb75upe.pdf pdf_icon

PMXB75UPE

PMXB75UPE 20 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package... See More ⇒

Detailed specifications: PMXB120EPE, PMXB350UPE, PMXB360ENEA, PMXB40UNE, PMXB43UNE, PMXB56EN, PMXB65ENE, PMXB65UPE, 7N60, PMZ1200UPE, PMZ130UNE, PMZ200UNE, PMZ290UN, PMZ290UNE, PMZ290UNE2, PMZ320UPE, PMZ350UPE

Keywords - PMXB75UPE MOSFET specs

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