All MOSFET. PMXB75UPE Datasheet

 

PMXB75UPE MOSFET. Datasheet pdf. Equivalent


   Type Designator: PMXB75UPE
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.317 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 2.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.8 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: DFN1010D-3

 PMXB75UPE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMXB75UPE Datasheet (PDF)

 ..1. Size:251K  nxp
 pmxb75upe.pdf

PMXB75UPE PMXB75UPE

PMXB75UPE20 V, P-channel Trench MOSFET8 July 2014 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package

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