PMZ320UPE Specs and Replacement

Type Designator: PMZ320UPE

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 11 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.51 Ohm

Package: DFN1006-3

PMZ320UPE substitution

- MOSFET ⓘ Cross-Reference Search

 

PMZ320UPE datasheet

 ..1. Size:220K  nxp
 pmz320upe.pdf pdf_icon

PMZ320UPE

PMZ320UPE 30 V, P-channel Trench MOSFET 24 March 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Ele... See More ⇒

Detailed specifications: PMXB65UPE, PMXB75UPE, PMZ1200UPE, PMZ130UNE, PMZ200UNE, PMZ290UN, PMZ290UNE, PMZ290UNE2, AON7403, PMZ350UPE, PMZ370UNE, PMZ390UNE, PMZ550UNE, PMZ600UNE, PMZ950UPE, PMZB1200UPE, PMZB150UNE

Keywords - PMZ320UPE MOSFET specs

 PMZ320UPE cross reference

 PMZ320UPE equivalent finder

 PMZ320UPE pdf lookup

 PMZ320UPE substitution

 PMZ320UPE replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs