All MOSFET. PMZ390UNE Datasheet

 

PMZ390UNE Datasheet and Replacement


   Type Designator: PMZ390UNE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 6 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.47 Ohm
   Package: DFN1006-3
 

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PMZ390UNE Datasheet (PDF)

 ..1. Size:213K  nxp
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PMZ390UNE

PMZ390UNE30 V, N-channel Trench MOSFET12 March 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Ele

 6.1. Size:207K  nxp
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PMZ390UNE

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Datasheet: PMZ130UNE , PMZ200UNE , PMZ290UN , PMZ290UNE , PMZ290UNE2 , PMZ320UPE , PMZ350UPE , PMZ370UNE , MMD60R360PRH , PMZ550UNE , PMZ600UNE , PMZ950UPE , PMZB1200UPE , PMZB150UNE , PMZB200UNE , PMZB290UN , PMZB290UNE .

History: STF16NM50N | CHM2313QGP | 1N65G-T92-B | 2P978D | HGA120N10A | STP1013 | RFP12N10L

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