PMZ390UNE Specs and Replacement

Type Designator: PMZ390UNE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.47 Ohm

Package: DFN1006-3

PMZ390UNE substitution

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PMZ390UNE datasheet

 ..1. Size:213K  nxp
 pmz390une.pdf pdf_icon

PMZ390UNE

PMZ390UNE 30 V, N-channel Trench MOSFET 12 March 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Ele... See More ⇒

 6.1. Size:207K  nxp
 pmz390un.pdf pdf_icon

PMZ390UNE

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒

Detailed specifications: PMZ130UNE, PMZ200UNE, PMZ290UN, PMZ290UNE, PMZ290UNE2, PMZ320UPE, PMZ350UPE, PMZ370UNE, RU7088R, PMZ550UNE, PMZ600UNE, PMZ950UPE, PMZB1200UPE, PMZB150UNE, PMZB200UNE, PMZB290UN, PMZB290UNE

Keywords - PMZ390UNE MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.