All MOSFET. PMZ950UPE Datasheet

 

PMZ950UPE Datasheet and Replacement


   Type Designator: PMZ950UPE
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 14 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: DFN1006-3
 

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PMZ950UPE Datasheet (PDF)

 ..1. Size:230K  nxp
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PMZ950UPE

PMZ950UPE20 V, P-channel Trench MOSFET10 July 2014 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package:

 0.1. Size:717K  nxp
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PMZ950UPE

PMZ950UPEL20 V, P-channel Trench MOSFET28 June 2016 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low leakage current Trench MOSFET technology Leadless ultra small and ultra

Datasheet: PMZ290UNE , PMZ290UNE2 , PMZ320UPE , PMZ350UPE , PMZ370UNE , PMZ390UNE , PMZ550UNE , PMZ600UNE , AO3407 , PMZB1200UPE , PMZB150UNE , PMZB200UNE , PMZB290UN , PMZB290UNE , PMZB290UNE2 , PMZB300XN , PMZB320UPE .

History: 2N65L-TA3-T

Keywords - PMZ950UPE MOSFET datasheet

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