All MOSFET. PMZB150UNE Datasheet

 

PMZB150UNE Datasheet and Replacement


   Type Designator: PMZB150UNE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 18 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: DFN1006B-3
 

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PMZB150UNE Datasheet (PDF)

 ..1. Size:220K  nxp
 pmzb150une.pdf pdf_icon

PMZB150UNE

PMZB150UNE20 V, N-channel Trench MOSFET24 March 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology

 9.1. Size:212K  nxp
 pmzb1200upe.pdf pdf_icon

PMZB150UNE

PMZB1200UPE30 V, P-channel Trench MOSFET25 March 2015 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching

Datasheet: PMZ320UPE , PMZ350UPE , PMZ370UNE , PMZ390UNE , PMZ550UNE , PMZ600UNE , PMZ950UPE , PMZB1200UPE , 5N50 , PMZB200UNE , PMZB290UN , PMZB290UNE , PMZB290UNE2 , PMZB300XN , PMZB320UPE , PMZB350UPE , PMZB370UNE .

History: TPA80R300C | TSM2611EDCX6 | GSM3316W | TTD30P03AT | VS6038AD | AO6801E | LPSC3487

Keywords - PMZB150UNE MOSFET datasheet

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