PMZB150UNE Specs and Replacement

Type Designator: PMZB150UNE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 18 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: DFN1006B-3

PMZB150UNE substitution

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PMZB150UNE datasheet

 ..1. Size:220K  nxp
 pmzb150une.pdf pdf_icon

PMZB150UNE

PMZB150UNE 20 V, N-channel Trench MOSFET 24 March 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology ... See More ⇒

 9.1. Size:212K  nxp
 pmzb1200upe.pdf pdf_icon

PMZB150UNE

PMZB1200UPE 30 V, P-channel Trench MOSFET 25 March 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching ... See More ⇒

Detailed specifications: PMZ320UPE, PMZ350UPE, PMZ370UNE, PMZ390UNE, PMZ550UNE, PMZ600UNE, PMZ950UPE, PMZB1200UPE, IRFP064N, PMZB200UNE, PMZB290UN, PMZB290UNE, PMZB290UNE2, PMZB300XN, PMZB320UPE, PMZB350UPE, PMZB370UNE

Keywords - PMZB150UNE MOSFET specs

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