PMZB290UN Datasheet. Specs and Replacement

Type Designator: PMZB290UN  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 11 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm

Package: DFN1006B-3

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PMZB290UN datasheet

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PMZB290UN

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PMZB290UN

PMZB290UNE 20 V, single N-channel Trench MOSFET Rev. 3 23 March 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection u... See More ⇒

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PMZB290UN

PMZB290UNE2 20 V, N-channel Trench MOSFET 24 March 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching ... See More ⇒

 9.1. Size:230K  nxp
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PMZB290UN

PMZB200UNE 30 V, N-channel Trench MOSFET 12 March 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology ... See More ⇒

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Detailed specifications: PMZ370UNE, PMZ390UNE, PMZ550UNE, PMZ600UNE, PMZ950UPE, PMZB1200UPE, PMZB150UNE, PMZB200UNE, AOD4184A, PMZB290UNE, PMZB290UNE2, PMZB300XN, PMZB320UPE, PMZB350UPE, PMZB370UNE, PMZB380XN, PMZB390UNE

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