PMZB300XN Specs and Replacement

Type Designator: PMZB300XN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 12 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: DFN1006B-3

PMZB300XN substitution

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PMZB300XN datasheet

 ..1. Size:205K  nxp
 pmzb300xn.pdf pdf_icon

PMZB300XN

PMZB300XN 20 V, single N-channel Trench MOSFET 1 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Fast switching Trench MOSFET technology Low ... See More ⇒

 9.1. Size:220K  nxp
 pmzb320upe.pdf pdf_icon

PMZB300XN

PMZB320UPE 30 V, P-channel Trench MOSFET 24 March 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching ... See More ⇒

 9.2. Size:968K  nxp
 pmzb370une.pdf pdf_icon

PMZB300XN

PMZB370UNE 30 V, single N-channel Trench MOSFET Rev. 1 8 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Ultra thin package ... See More ⇒

 9.3. Size:215K  nxp
 pmzb390une.pdf pdf_icon

PMZB300XN

PMZB390UNE 30 V, N-channel Trench MOSFET 12 March 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology ... See More ⇒

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Detailed specifications: PMZ600UNE, PMZ950UPE, PMZB1200UPE, PMZB150UNE, PMZB200UNE, PMZB290UN, PMZB290UNE, PMZB290UNE2, IRF740, PMZB320UPE, PMZB350UPE, PMZB370UNE, PMZB380XN, PMZB390UNE, PMZB420UN, PMZB550UNE, PMZB600UNE

Keywords - PMZB300XN MOSFET specs

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