PMZB390UNE Specs and Replacement

Type Designator: PMZB390UNE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.47 Ohm

Package: DFN1006B-3

PMZB390UNE substitution

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PMZB390UNE datasheet

 ..1. Size:215K  nxp
 pmzb390une.pdf pdf_icon

PMZB390UNE

PMZB390UNE 30 V, N-channel Trench MOSFET 12 March 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology ... See More ⇒

 9.1. Size:220K  nxp
 pmzb320upe.pdf pdf_icon

PMZB390UNE

PMZB320UPE 30 V, P-channel Trench MOSFET 24 March 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching ... See More ⇒

 9.2. Size:968K  nxp
 pmzb370une.pdf pdf_icon

PMZB390UNE

PMZB370UNE 30 V, single N-channel Trench MOSFET Rev. 1 8 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Ultra thin package ... See More ⇒

 9.3. Size:205K  nxp
 pmzb300xn.pdf pdf_icon

PMZB390UNE

PMZB300XN 20 V, single N-channel Trench MOSFET 1 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Fast switching Trench MOSFET technology Low ... See More ⇒

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Detailed specifications: PMZB290UN, PMZB290UNE, PMZB290UNE2, PMZB300XN, PMZB320UPE, PMZB350UPE, PMZB370UNE, PMZB380XN, 50N06, PMZB420UN, PMZB550UNE, PMZB600UNE, PMZB670UPE, PMZB790SN, PMZB950UPE, PNM23T100V6, PNM23T703E0-2

Keywords - PMZB390UNE MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.