PNMDP100V10 Specs and Replacement

Type Designator: PNMDP100V10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.4 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: TO-252

PNMDP100V10 substitution

- MOSFET ⓘ Cross-Reference Search

 

PNMDP100V10 datasheet

 ..1. Size:127K  prisemi
 pnmdp100v10.pdf pdf_icon

PNMDP100V10

PNMDP100V10 N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary D (2) VDS(V) RDS(on)(m ) ID(A) 100 105@VGS=10V 9.6 G (1) S (3) Absolute maximum rating@25 Parameter Symbol Maximum Units Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TA=25 9.6 ... See More ⇒

 9.1. Size:123K  prisemi
 pnmdp30v60.pdf pdf_icon

PNMDP100V10

PNMDP30V60 N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary D (2) VDS(V) RDS(on)(m ) ID(A) 30 8.3@VGS=10V 60 G (1) S (3) Absolute maximum rating@25 Parameter Symbol Maximum Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 V TA=25 60 Drai... See More ⇒

 9.2. Size:113K  prisemi
 pnmdp600v4 pnmip600v4.pdf pdf_icon

PNMDP100V10

PNMDP600V4 PNMIP600V4 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 2 MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) 600 1.9@ VGS=10V 4 G 1 S 3 Electrical characteristics per line@25 ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARACTERISTICS Drai... See More ⇒

 9.3. Size:113K  prisemi
 pnmdp600v2 pnmip600v2.pdf pdf_icon

PNMDP100V10

PNMDP600V2 PNMIP600V2 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 2 MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) 600 3.6@ VGS=10V 2 G 1 S 3 Electrical characteristics per line@25 ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARACTERISTICS Drai... See More ⇒

SHOW MORE

Detailed specifications: PNM23T703E0-2, PNM523T201E0, PNM523T703E0-2, PNM723T201E0, PNM723T703E0-2, PNM8N30V60, PNM8P30V12, PNM8P30V20, P55NF06, PNMDP30V60, PNMDP30V90, PNMDP600V1, PNMDP600V2, PNMDP600V4, PNMET20V06E, PNMIP600V1, PNMIP600V2

Keywords - PNMDP100V10 MOSFET specs

 PNMDP100V10 cross reference

 PNMDP100V10 equivalent finder

 PNMDP100V10 pdf lookup

 PNMDP100V10 substitution

 PNMDP100V10 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.