PNMDP100V10 - параметры транзистора MOSFET, его аналоги, datasheet

PNMDP100V10 Datasheet (PDF)

..1. Size:127K prisemi
pnmdp100v10.pdf pdf_icon

PNMDP100V10 N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary D (2) VDS(V) RDS(on)(m) ID(A) 100 105@VGS=10V 9.6G (1) S (3) Absolute maximum rating@25 Parameter Symbol Maximum Units Drain-Source Voltage VDS 100 VGate-Source Voltage VGS 20 V TA=25 9.6

9.1. Size:123K prisemi
pnmdp30v60.pdf pdf_icon

PNMDP30V60 N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary D (2) VDS(V) RDS(on)(m) ID(A) 30 8.3@VGS=10V 60G (1) S (3) Absolute maximum rating@25 Parameter Symbol Maximum Units Drain-Source Voltage VDS 30 VGate-Source Voltage VGS 20 V TA=25 60 Drai

9.2. Size:113K prisemi
pnmdp600v4 pnmip600v4.pdf pdf_icon

PNMDP600V4 PNMIP600V4 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D2 MOSFET Product Summary VDS(V) RDS(on)() ID(A) 600 1.9@ VGS=10V 4G1 S3 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF CHARACTERISTICS Drai

9.3. Size:113K prisemi
pnmdp600v2 pnmip600v2.pdf pdf_icon

PNMDP600V2 PNMIP600V2 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D2 MOSFET Product Summary VDS(V) RDS(on)() ID(A) 600 3.6@ VGS=10V 2G1 S3 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF CHARACTERISTICS Drai