PNMDP30V60 Specs and Replacement

Type Designator: PNMDP30V60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0185 Ohm

Package: TO-252

PNMDP30V60 substitution

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PNMDP30V60 datasheet

 ..1. Size:123K  prisemi
 pnmdp30v60.pdf pdf_icon

PNMDP30V60

PNMDP30V60 N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary D (2) VDS(V) RDS(on)(m ) ID(A) 30 8.3@VGS=10V 60 G (1) S (3) Absolute maximum rating@25 Parameter Symbol Maximum Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 V TA=25 60 Drai... See More ⇒

 6.1. Size:117K  prisemi
 pnmdp30v90.pdf pdf_icon

PNMDP30V60

PNMDP30V90 N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary D (2) VDS(V) RDS(on)(m ) ID(A) 30 4@VGS=10V 80 G (1) S (3) Absolute maximum rating@25 Parameter Symbol Maximum Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 V TA=25 80 Drain ... See More ⇒

 9.1. Size:113K  prisemi
 pnmdp600v4 pnmip600v4.pdf pdf_icon

PNMDP30V60

PNMDP600V4 PNMIP600V4 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 2 MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) 600 1.9@ VGS=10V 4 G 1 S 3 Electrical characteristics per line@25 ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARACTERISTICS Drai... See More ⇒

 9.2. Size:113K  prisemi
 pnmdp600v2 pnmip600v2.pdf pdf_icon

PNMDP30V60

PNMDP600V2 PNMIP600V2 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 2 MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) 600 3.6@ VGS=10V 2 G 1 S 3 Electrical characteristics per line@25 ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARACTERISTICS Drai... See More ⇒

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Detailed specifications: PNM523T201E0, PNM523T703E0-2, PNM723T201E0, PNM723T703E0-2, PNM8N30V60, PNM8P30V12, PNM8P30V20, PNMDP100V10, 8205A, PNMDP30V90, PNMDP600V1, PNMDP600V2, PNMDP600V4, PNMET20V06E, PNMIP600V1, PNMIP600V2, PNMIP600V4

Keywords - PNMDP30V60 MOSFET specs

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