PNMIP600V1 Datasheet and Replacement
Type Designator: PNMIP600V1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1.3 A
tr ⓘ - Rise Time: 6.7 nS
Cossⓘ - Output Capacitance: 14.5 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 9 Ohm
Package: TO-251
PNMIP600V1 substitution
PNMIP600V1 Datasheet (PDF)
pnmdp600v1 pnmip600v1.pdf

PNMDP600V1 PNMIP600V1 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D2 MOSFET Product Summary VDS(V) RDS(on)() ID(A) 600 7.5@ VGS=10V 1.3G1 S3 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF CHARACTERISTICS Dr
pnmdp600v4 pnmip600v4.pdf

PNMDP600V4 PNMIP600V4 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D2 MOSFET Product Summary VDS(V) RDS(on)() ID(A) 600 1.9@ VGS=10V 4G1 S3 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF CHARACTERISTICS Drai
pnmdp600v2 pnmip600v2.pdf

PNMDP600V2 PNMIP600V2 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D2 MOSFET Product Summary VDS(V) RDS(on)() ID(A) 600 3.6@ VGS=10V 2G1 S3 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF CHARACTERISTICS Drai
Datasheet: PNM8P30V20 , PNMDP100V10 , PNMDP30V60 , PNMDP30V90 , PNMDP600V1 , PNMDP600V2 , PNMDP600V4 , PNMET20V06E , IRFP260 , PNMIP600V2 , PNMIP600V4 , PNMT20V3 , PNMT30V6 , PNMT45V2 , PNMT50V02E , PNMT60V02 , PNMT60V02E .
History: SIHFP048
Keywords - PNMIP600V1 MOSFET datasheet
PNMIP600V1 cross reference
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PNMIP600V1 lookup
PNMIP600V1 substitution
PNMIP600V1 replacement
History: SIHFP048



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