All MOSFET. PNMT20V3 Datasheet

 

PNMT20V3 Datasheet and Replacement


   Type Designator: PNMT20V3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   trⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT-23
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PNMT20V3 Datasheet (PDF)

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PNMT20V3

PNMT20V3 N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, D3 low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) RDS(on)() ID(A) G1 20 0.043@ VGS=4.5V 3S2 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF/ON CHARACTE

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History: APT5010B2FLLG | CED05N8 | AON6794 | IRLR024 | QM2410D | BUZ84 | BL10N70-A

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