All MOSFET. PNMT20V3 Datasheet

 

PNMT20V3 Datasheet and Replacement


   Type Designator: PNMT20V3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Qg ⓘ - Total Gate Charge: 5.2 nC
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT-23
 

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PNMT20V3 Datasheet (PDF)

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PNMT20V3

PNMT20V3 N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, D3 low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) RDS(on)() ID(A) G1 20 0.043@ VGS=4.5V 3S2 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF/ON CHARACTE

Datasheet: PNMDP30V90 , PNMDP600V1 , PNMDP600V2 , PNMDP600V4 , PNMET20V06E , PNMIP600V1 , PNMIP600V2 , PNMIP600V4 , IRF1010E , PNMT30V6 , PNMT45V2 , PNMT50V02E , PNMT60V02 , PNMT60V02E , PNMT60V3 , PNMTO600V2 , PNMTO600V4 .

History: MCT06P10 | MCG50N03 | 2SK2998 | UT3404G-AE3-R | SIHFIB6N60A | BSR316P | PJS6416

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