All MOSFET. PNMT20V3 Datasheet

 

PNMT20V3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: PNMT20V3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 1.25 W
   Maximum Drain-Source Voltage |Vds|: 20 V
   Maximum Gate-Source Voltage |Vgs|: 8 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 1.2 V
   Maximum Drain Current |Id|: 3 A
   Total Gate Charge (Qg): 5.2 nC
   Rise Time (tr): 55 nS
   Drain-Source Capacitance (Cd): 70 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.06 Ohm
   Package: SOT-23

 PNMT20V3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PNMT20V3 Datasheet (PDF)

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 pnmt20v3.pdf

PNMT20V3 PNMT20V3

PNMT20V3 N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, D3 low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) RDS(on)() ID(A) G1 20 0.043@ VGS=4.5V 3S2 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF/ON CHARACTE

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History: NP80N055NLE

 

 
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