All MOSFET. PNMT30V6 Datasheet

 

PNMT30V6 Datasheet and Replacement


   Type Designator: PNMT30V6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5.8 A
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: SOT-23
 

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PNMT30V6 Datasheet (PDF)

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PNMT30V6

PNMT30V6 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary VDS(V) RDS(on)() ID(A) 30 0.030@ VGS=10V 5.8G1 S2 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF CHARACTERISTICS Drain-Source Br

Datasheet: PNMDP600V1 , PNMDP600V2 , PNMDP600V4 , PNMET20V06E , PNMIP600V1 , PNMIP600V2 , PNMIP600V4 , PNMT20V3 , 2N7000 , PNMT45V2 , PNMT50V02E , PNMT60V02 , PNMT60V02E , PNMT60V3 , PNMTO600V2 , PNMTO600V4 , PNMTO600V5 .

History: IRF644NSPBF | 2N60L-TN3-R | HM32N20 | IPD127N06L | RU30160S | 50N06L-TQ2-R | OSG65R099FT3ZF

Keywords - PNMT30V6 MOSFET datasheet

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