PNMT30V6 Datasheet and Replacement
Type Designator: PNMT30V6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 5.8 A
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: SOT-23
PNMT30V6 substitution
PNMT30V6 Datasheet (PDF)
pnmt30v6.pdf
PNMT30V6 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary VDS(V) RDS(on)() ID(A) 30 0.030@ VGS=10V 5.8G1 S2 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF CHARACTERISTICS Drain-Source Br
Datasheet: PNMDP600V1 , PNMDP600V2 , PNMDP600V4 , PNMET20V06E , PNMIP600V1 , PNMIP600V2 , PNMIP600V4 , PNMT20V3 , IRF4905 , PNMT45V2 , PNMT50V02E , PNMT60V02 , PNMT60V02E , PNMT60V3 , PNMTO600V2 , PNMTO600V4 , PNMTO600V5 .
History: SSP7200N
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: SSP7200N
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