PNMT30V6 MOSFET. Datasheet pdf. Equivalent
Type Designator: PNMT30V6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id|ⓘ - Maximum Drain Current: 5.8 A
Cossⓘ - Output Capacitance: 100 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: SOT-23
PNMT30V6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PNMT30V6 Datasheet (PDF)
..1. Size:140K prisemi
pnmt30v6.pdf
pnmt30v6.pdf
PNMT30V6 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary VDS(V) RDS(on)() ID(A) 30 0.030@ VGS=10V 5.8G1 S2 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF CHARACTERISTICS Drain-Source Br
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