PNMT30V6 Specs and Replacement

Type Designator: PNMT30V6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.8 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: SOT-23

PNMT30V6 substitution

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PNMT30V6 datasheet

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 pnmt30v6.pdf pdf_icon

PNMT30V6

PNMT30V6 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 3 MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) 30 0.030@ VGS=10V 5.8 G 1 S 2 Electrical characteristics per line@25 ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARACTERISTICS Drain-Source Br... See More ⇒

Detailed specifications: PNMDP600V1, PNMDP600V2, PNMDP600V4, PNMET20V06E, PNMIP600V1, PNMIP600V2, PNMIP600V4, PNMT20V3, IRF4905, PNMT45V2, PNMT50V02E, PNMT60V02, PNMT60V02E, PNMT60V3, PNMTO600V2, PNMTO600V4, PNMTO600V5

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