All MOSFET. PNMTOF600V8 Datasheet

 

PNMTOF600V8 Datasheet and Replacement


   Type Designator: PNMTOF600V8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 109 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.15 Ohm
   Package: TO-220F
 

 PNMTOF600V8 substitution

   - MOSFET ⓘ Cross-Reference Search

 

PNMTOF600V8 Datasheet (PDF)

 ..1. Size:124K  prisemi
 pnmto600v8 pnmtof600v8.pdf pdf_icon

PNMTOF600V8

PNMTO600V8 PNMTOF600V8 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D2 MOSFET Product Summary VDS(V) RDS(on)() ID(A) 600 0.98@ VGS=10V 8.0G1 S3Absolute maximum rating@25 PNMTO6 PNMTOFRating Symbol Units 00V8 600V8 Drain-Source Voltage VDS 600 VGate-Source Voltage VGS 30 V

 4.1. Size:119K  prisemi
 pnmto600v4 pnmtof600v4.pdf pdf_icon

PNMTOF600V8

PNMTO600V4 PNMTOF600V4 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D2 MOSFET Product Summary VDS(V) RDS(on)() ID(A) 600 1.9@ VGS=10V 4G1 S3 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF CHARACTERISTICS Dra

 4.2. Size:124K  prisemi
 pnmto600v7 pnmtof600v7.pdf pdf_icon

PNMTOF600V8

PNMTO600V7 PNMTOF600V7 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D2 MOSFET Product Summary VDS(V) RDS(on)() ID(A) 600 1.1@ VGS=10V 7.0G1 S3Absolute maximum rating@25 Rating Symbol Value Units Drain-Source Voltage VDS 600 VGate-Source Voltage VGS 20 V Continuous Drain Curre

 4.3. Size:119K  prisemi
 pnmto600v2 pnmtof600v2.pdf pdf_icon

PNMTOF600V8

PNMTO600V2 PNMTOF600V2 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D2 MOSFET Product Summary VDS(V) RDS(on)() ID(A) 600 3.6@ VGS=10V 2G1 S3 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF CHARACTERISTICS Dra

SHOW MORE

Datasheet: PNMTO600V4 , PNMTO600V5 , PNMTO600V7 , PNMTO600V8 , PNMTOF600V2 , PNMTOF600V4 , PNMTOF600V5 , PNMTOF600V7 , IRLZ44N , PNMTOF650V13 , PNMUT20V06 , PNMVT20V03E , PPF240M , PPM3T20V6 , PPM523T201E0 , PPM6N12V10 , PPM6N20V10 .

History: AP9478GM | AP9412CGM-HF

Keywords - PNMTOF600V8 MOSFET datasheet

 PNMTOF600V8 cross reference
 PNMTOF600V8 equivalent finder
 PNMTOF600V8 lookup
 PNMTOF600V8 substitution
 PNMTOF600V8 replacement

 

 
Back to Top

 


 
.