PNMTOF600V8 Specs and Replacement

Type Designator: PNMTOF600V8

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 109 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.15 Ohm

Package: TO-220F

PNMTOF600V8 substitution

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PNMTOF600V8 datasheet

 ..1. Size:124K  prisemi
 pnmto600v8 pnmtof600v8.pdf pdf_icon

PNMTOF600V8

PNMTO600V8 PNMTOF600V8 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 2 MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) 600 0.98@ VGS=10V 8.0 G 1 S 3 Absolute maximum rating@25 PNMTO6 PNMTOF Rating Symbol Units 00V8 600V8 Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS 30 V ... See More ⇒

 4.1. Size:119K  prisemi
 pnmto600v4 pnmtof600v4.pdf pdf_icon

PNMTOF600V8

PNMTO600V4 PNMTOF600V4 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 2 MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) 600 1.9@ VGS=10V 4 G 1 S 3 Electrical characteristics per line@25 ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARACTERISTICS Dra... See More ⇒

 4.2. Size:124K  prisemi
 pnmto600v7 pnmtof600v7.pdf pdf_icon

PNMTOF600V8

PNMTO600V7 PNMTOF600V7 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 2 MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) 600 1.1@ VGS=10V 7.0 G 1 S 3 Absolute maximum rating@25 Rating Symbol Value Units Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS 20 V Continuous Drain Curre... See More ⇒

 4.3. Size:119K  prisemi
 pnmto600v2 pnmtof600v2.pdf pdf_icon

PNMTOF600V8

PNMTO600V2 PNMTOF600V2 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 2 MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) 600 3.6@ VGS=10V 2 G 1 S 3 Electrical characteristics per line@25 ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARACTERISTICS Dra... See More ⇒

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Detailed specifications: PNMTO600V4, PNMTO600V5, PNMTO600V7, PNMTO600V8, PNMTOF600V2, PNMTOF600V4, PNMTOF600V5, PNMTOF600V7, AON6380, PNMTOF650V13, PNMUT20V06, PNMVT20V03E, PPF240M, PPM3T20V6, PPM523T201E0, PPM6N12V10, PPM6N20V10

Keywords - PNMTOF600V8 MOSFET specs

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