All MOSFET. PNMUT20V06 Datasheet

 

PNMUT20V06 Datasheet and Replacement


   Type Designator: PNMUT20V06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.17 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 0.6 A
   Cossⓘ - Output Capacitance: 23 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: SOT-323
 

 PNMUT20V06 substitution

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PNMUT20V06 Datasheet (PDF)

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PNMUT20V06

PNMUT20V06 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary VDS(V) RDS(on)() ID(A) 20 0.3@ VGS=4.5V 0.6G1 S2 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF CHARACTERISTICS Drain-Source B

Datasheet: PNMTO600V7 , PNMTO600V8 , PNMTOF600V2 , PNMTOF600V4 , PNMTOF600V5 , PNMTOF600V7 , PNMTOF600V8 , PNMTOF650V13 , CS150N03A8 , PNMVT20V03E , PPF240M , PPM3T20V6 , PPM523T201E0 , PPM6N12V10 , PPM6N20V10 , PPM723T201E0 , PPM8P30V10 .

History: BUZ100S

Keywords - PNMUT20V06 MOSFET datasheet

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