PNMUT20V06 Specs and Replacement

Type Designator: PNMUT20V06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.17 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.6 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 23 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm

Package: SOT-323

PNMUT20V06 substitution

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PNMUT20V06 datasheet

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PNMUT20V06

PNMUT20V06 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 3 MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) 20 0.3@ VGS=4.5V 0.6 G 1 S 2 Electrical characteristics per line@25 ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARACTERISTICS Drain-Source B... See More ⇒

Detailed specifications: PNMTO600V7, PNMTO600V8, PNMTOF600V2, PNMTOF600V4, PNMTOF600V5, PNMTOF600V7, PNMTOF600V8, PNMTOF650V13, CS150N03A8, PNMVT20V03E, PPF240M, PPM3T20V6, PPM523T201E0, PPM6N12V10, PPM6N20V10, PPM723T201E0, PPM8P30V10

Keywords - PNMUT20V06 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.