All MOSFET. PPM6N20V10 Datasheet

 

PPM6N20V10 Datasheet and Replacement


   Type Designator: PPM6N20V10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: DFN2X2-6L
 

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PPM6N20V10 Datasheet (PDF)

 ..1. Size:125K  prisemi
 ppm6n20v10.pdf pdf_icon

PPM6N20V10

PPM6N20V10 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. MOSFET Product Summary VDS(V) RDS(on)(m) ID(A) -20 14 @ VGS=-4.5V -10Bottom View Internal structure D D G 3 2 11 6 D D2 5 D D 3 4 G S6 5 4D D S Absolute m

 9.1. Size:1131K  prisemi
 ppm6n12v10.pdf pdf_icon

PPM6N20V10

PPM6N12V10P-Channel MOSFETDescriptionThe enhancement mode MOS is extremely high density cell and low on-resistance.MOSFET Product SummaryV (V) R (m) I (A)DS DS(on) D-12 12 @ V =-4.5V -10GSInternal structureBottom ViewD D G3216D1D5DD2D S4SG36 5 4D DSAbsolute maximum ratin

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History: UPA2755GR

Keywords - PPM6N20V10 MOSFET datasheet

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