All MOSFET. PPM6N20V10 Datasheet

 

PPM6N20V10 MOSFET. Datasheet pdf. Equivalent


   Type Designator: PPM6N20V10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 37 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: DFN2X2-6L

 PPM6N20V10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PPM6N20V10 Datasheet (PDF)

 ..1. Size:125K  prisemi
 ppm6n20v10.pdf

PPM6N20V10 PPM6N20V10

PPM6N20V10 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. MOSFET Product Summary VDS(V) RDS(on)(m) ID(A) -20 14 @ VGS=-4.5V -10Bottom View Internal structure D D G 3 2 11 6 D D2 5 D D 3 4 G S6 5 4D D S Absolute m

 9.1. Size:1131K  prisemi
 ppm6n12v10.pdf

PPM6N20V10 PPM6N20V10

PPM6N12V10P-Channel MOSFETDescriptionThe enhancement mode MOS is extremely high density cell and low on-resistance.MOSFET Product SummaryV (V) R (m) I (A)DS DS(on) D-12 12 @ V =-4.5V -10GSInternal structureBottom ViewD D G3216D1D5DD2D S4SG36 5 4D DSAbsolute maximum ratin

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: CSD19535KCS | 2SK3927-01L | HGS098N10AL

 

 
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