PPM6N20V10 Specs and Replacement

Type Designator: PPM6N20V10

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 1100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: DFN2X2-6L

PPM6N20V10 substitution

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PPM6N20V10 datasheet

 ..1. Size:125K  prisemi
 ppm6n20v10.pdf pdf_icon

PPM6N20V10

PPM6N20V10 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. MOSFET Product Summary VDS(V) RDS(on)(m ) ID(A) -20 14 @ VGS=-4.5V -10 Bottom View Internal structure D D G 3 2 1 1 6 D D 2 5 D D 3 4 G S 6 5 4 D D S Absolute m... See More ⇒

 9.1. Size:1131K  prisemi
 ppm6n12v10.pdf pdf_icon

PPM6N20V10

PPM6N12V10 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. MOSFET Product Summary V (V) R (m ) I (A) DS DS(on) D -12 12 @ V =-4.5V -10 GS Internal structure Bottom View D D G 3 2 1 6 D 1 D 5 D D 2 D S 4 S G 3 6 5 4 D D S Absolute maximum ratin... See More ⇒

Detailed specifications: PNMTOF600V8, PNMTOF650V13, PNMUT20V06, PNMVT20V03E, PPF240M, PPM3T20V6, PPM523T201E0, PPM6N12V10, AO4407, PPM723T201E0, PPM8P30V10, PPMDP100V10, PPMET20V08, PPMET20V08E, PPMS8N20V3, PPMT12V4, PPMT20V3

Keywords - PPM6N20V10 MOSFET specs

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