PPMDP100V10 Specs and Replacement

Type Designator: PPMDP100V10

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: TO-252

PPMDP100V10 substitution

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PPMDP100V10 datasheet

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PPMDP100V10

PPMDP100V10 P-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary D (2) VDS(V) RDS(on)(m ) ID(A) -100 170@VGS=10V -13 G (1) S (3) Absolute maximum rating@25 Parameter Symbol Maximum Units Drain-Source Voltage VDS -100 V Gate-Source Voltage VGS 20 V TA=25 -13... See More ⇒

Detailed specifications: PNMVT20V03E, PPF240M, PPM3T20V6, PPM523T201E0, PPM6N12V10, PPM6N20V10, PPM723T201E0, PPM8P30V10, IRFP250, PPMET20V08, PPMET20V08E, PPMS8N20V3, PPMT12V4, PPMT20V3, PPMT20V4E, PPMT30V3, PPMT30V4

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.