PPMET20V08E Specs and Replacement

Type Designator: PPMET20V08E

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.8 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: SOT-523

PPMET20V08E substitution

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PPMET20V08E datasheet

 ..1. Size:109K  prisemi
 ppmet20v08e.pdf pdf_icon

PPMET20V08E

PPMET20V08E P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 3 MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) 0.85@ VGS=-4.5V -0.8 G 1 -20 1.2@ VGS=-2.5V -0.5 S 2 Electrical characteristics per line@25 ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF CHAR... See More ⇒

 4.1. Size:109K  prisemi
 ppmet20v08.pdf pdf_icon

PPMET20V08E

PPMET20V08 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 3 MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) G 1 0.85@ VGS=-4.5V -0.8 -20 1.2@ VGS=-2.5V -0.5 S 2 Electrical characteristics per line@25 ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARA... See More ⇒

Detailed specifications: PPM3T20V6, PPM523T201E0, PPM6N12V10, PPM6N20V10, PPM723T201E0, PPM8P30V10, PPMDP100V10, PPMET20V08, 2SK3568, PPMS8N20V3, PPMT12V4, PPMT20V3, PPMT20V4E, PPMT30V3, PPMT30V4, PPMT32V4, PPMT50V02

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