All MOSFET. PPMET20V08E Datasheet

 

PPMET20V08E Datasheet and Replacement


   Type Designator: PPMET20V08E
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.8 A
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: SOT-523
 

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PPMET20V08E Datasheet (PDF)

 ..1. Size:109K  prisemi
 ppmet20v08e.pdf pdf_icon

PPMET20V08E

PPMET20V08E P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary VDS(V) RDS(on)() ID(A) 0.85@ VGS=-4.5V -0.8G1-20 1.2@ VGS=-2.5V -0.5S2 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF CHAR

 4.1. Size:109K  prisemi
 ppmet20v08.pdf pdf_icon

PPMET20V08E

PPMET20V08 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary VDS(V) RDS(on)() ID(A) G10.85@ VGS=-4.5V -0.8-20 1.2@ VGS=-2.5V -0.5S2 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF CHARA

Datasheet: PPM3T20V6 , PPM523T201E0 , PPM6N12V10 , PPM6N20V10 , PPM723T201E0 , PPM8P30V10 , PPMDP100V10 , PPMET20V08 , 5N65 , PPMS8N20V3 , PPMT12V4 , PPMT20V3 , PPMT20V4E , PPMT30V3 , PPMT30V4 , PPMT32V4 , PPMT50V02 .

History: BRCS020N04RA | VBMB165R10 | F3L15MR12W2M1B69 | CSD23381F4 | BUZ103SL | CEB04N65

Keywords - PPMET20V08E MOSFET datasheet

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