PPMT20V3 MOSFET Datasheet: P-Ch, 20V, 2.8A. Full specification with pinout and replacement list

PPMT20V3 Specs and Replacement

   Type Designator: PPMT20V3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 2.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   Cossⓘ - Output Capacitance: 125 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: SOT-23

PPMT20V3 substitution

- MOSFET ⓘ Cross-Reference Search

PPMT20V3 datasheet

..1. Size:109K prisemi
ppmt20v3.pdf pdf_icon

PPMT20V3 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 3 MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) G 1 0.08 @ VGS=-4.5V -20 -2.8 0.11@ VGS=-2.5V S 2 Electrical characteristics per line@25 ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARACTE... See More ⇒

7.1. Size:225K prisemi
ppmt20v4e.pdf pdf_icon

PPMT20V4E P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 3 MOSFET Product Summary V (V) R ( ) I (A) DS DS(on) D G 1 -20 0.037 @ V =-4.5V -4 GS S 2 Absolute maximum rating@25 Rating Symbol Value Units Drain-Source Voltage V -20V DS Gate-Source Voltage V 10 V GS Drain Current Contin... See More ⇒

9.1. Size:1155K prisemi
ppmt2301.pdf pdf_icon