All MOSFET. PPMT20V3 Datasheet

 

PPMT20V3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: PPMT20V3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9 V
   |Id|ⓘ - Maximum Drain Current: 2.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 125 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: SOT-23

 PPMT20V3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PPMT20V3 Datasheet (PDF)

 ..1. Size:109K  prisemi
 ppmt20v3.pdf

PPMT20V3 PPMT20V3

PPMT20V3 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary VDS(V) RDS(on)() ID(A) G10.08 @ VGS=-4.5V -20 -2.8 0.11@ VGS=-2.5V S2 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF CHARACTE

 7.1. Size:225K  prisemi
 ppmt20v4e.pdf

PPMT20V3 PPMT20V3

PPMT20V4E P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary V (V) R () I (A) DS DS(on) DG1-20 0.037 @ V =-4.5V -4 GSS2 Absolute maximum rating@25 Rating Symbol Value Units Drain-Source Voltage V -20VDSGate-Source Voltage V 10 V GSDrain Current Contin

 9.1. Size:1155K  prisemi
 ppmt2301.pdf

PPMT20V3 PPMT20V3

PPMT2301P-Channel MOSFETDescription Trench Power LV MOSFET technology High Power and Current handing capability Low Gate ChargeMOSFET Product SummaryVDS(V) RDS(on)(m) ID(A)Top View90@VGS = -4.5V-20 -4.0135@VGS = -2.5VApplications PWM applications Load switch Circuit Diagram Power management2301Marking (Top View)Absolute maximum rating@25

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