PSMG100-05 Datasheet and Replacement
Type Designator: PSMG100-05
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 400 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 82 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 1280 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: ECO-PAC2
PSMG100-05 substitution
PSMG100-05 Datasheet (PDF)
psmg100-05.pdf
ECO-PACTM 2Power MOSFETID25 = 82 APSMG 100/05*VDSS = 500 Vin ECO-PAC 2RDSon = 50 mX18Single MOSFET DieI K10 A1 L N 9Preliminary Data SheetK13 K15*NTC optionalMOSFETSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGS Continuous 20 VVGSM Transient 30 VFeaturesID25 T
psmg150-01.pdf
ECO-PACTM 2Power MOSFETVDSS = 100 Vin ECO-PAC 2PSMG 150/01* ID25 = 165 ARDS(on) = 8 mX18Single MOSFET DieI K10/11 A1 L N 8/9trr
Datasheet: PS20N600A , PS4953A , PS60N60 , PS75N75 , PS75N75A , PS8205A , PS8205B , PS90N80 , 2SK3918 , PSMG150-01 , PSMG50-05 , PSMG60-08 , PSMN003-30B , PSMN003-30P , PSMN004-36B , PSMN004-55W , PSMN005-25D .
History: AO3456 | MMBFJ175 | SIHD4N80E | IPC100N04S5L-2R6
Keywords - PSMG100-05 MOSFET datasheet
PSMG100-05 cross reference
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History: AO3456 | MMBFJ175 | SIHD4N80E | IPC100N04S5L-2R6
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