All MOSFET. PSMN004-55W Datasheet

 

PSMN004-55W Datasheet and Replacement


   Type Designator: PSMN004-55W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 118 nS
   Cossⓘ - Output Capacitance: 1900 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: TO-247
 

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PSMN004-55W Datasheet (PDF)

 ..1. Size:96K  philips
psmn004-55w.pdf pdf_icon

PSMN004-55W

Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN004-55W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Very low on-state resistance Fast switching ID = 100 A Low thermal resistance Logic level compatible RDS(ON) 4.2 m (VGS = 10 V)gRDS(ON) 4.5 m (VGS = 5 V)sRDS(ON) 5

 6.1. Size:105K  philips
psmn004-25b p 4.pdf pdf_icon

PSMN004-55W

Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN004-25B, PSMN004-25PFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 75 A Low thermal resistanceRDS(ON) 4 m (VGS = 10 V)gRDS(ON) 5 m (VGS = 5 V)sGENERAL DESCRIPTIONSiliconMAX pr

 6.2. Size:294K  philips
psmn004-36b.pdf pdf_icon

PSMN004-55W

PSMN004-36P/36BN-channel enhancement mode field-effect transistorRev. 01 19 November 2001 Product data1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability:PSMN004-36P in SOT78 (TO-220AB)PSMN004-36B in SOT404 (D2-PAK).2. Features Very low on-state resistance Fast switching.3. Applicat

 6.3. Size:712K  nxp
psmn004-60b.pdf pdf_icon

PSMN004-55W

PSMN004-60BN-channel TrenchMOS SiliconMAX standard level FETRev. 02 15 December 2009 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial ap

Datasheet: PS90N80 , PSMG100-05 , PSMG150-01 , PSMG50-05 , PSMG60-08 , PSMN003-30B , PSMN003-30P , PSMN004-36B , IRFP064N , PSMN005-25D , PSMN005-55B , PSMN005-55P , PSMN005-75P , PSMN008-75P , PSMN009-100W , PSMN010-25YLC , PSMN010-55D .

History: CEU4201 | MEE4294P2-G | CEU6601 | MTE010N10FP

Keywords - PSMN004-55W MOSFET datasheet

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