WTC3401 MOSFET. Datasheet pdf. Equivalent
Type Designator: WTC3401
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3 V
|Id|ⓘ - Maximum Drain Current: 4.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 9.4 nC
trⓘ - Rise Time: 3.2 nS
Cossⓘ - Output Capacitance: 115 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: SOT-23
WTC3401 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WTC3401 Datasheet (PDF)
wtc3401.pdf
WTC34013 DRAINP-Channel Enhancement DRAIN CURRENTMode Power MOSFET -4.2 AMPERESDRAIN SOURCE VOLTAGE1-30 VOLTAGEGATE2SOURCE3Features:*Advanced trench process technology1 *High Density Cell Design For Ultra Low 2On-ResistanceSOT-23Maximum Ratings(TA=25 Unless Otherwise Specified)Rating Symbol Value UnitDrain-Source Voltage -30 VDSV Gate-Source Vo
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SI1012R
History: SI1012R
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918