WVM11N80 Specs and Replacement

Type Designator: WVM11N80

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 230 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: TO3

WVM11N80 substitution

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WVM11N80 datasheet

 ..1. Size:22K  shaanxi
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WVM11N80

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China WVM11N80 Power MOSFET(N-channel) Transistor Features 1. It s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards QZJ840611 3. Use for high speed switch, circuit of power source co... See More ⇒

Detailed specifications: PSMN013-100YSE, PSMN013-30MLC, PSMN015-60BS, PSMN016-100BS, WPH4003, WT3139K, WTC3401, WTX1013, IRFB4115, WVM12N10, WVM13N50, WVM15N20, WVM15N40, WVM15N45, WVM15N50, WVM15N60, WVM18N20

Keywords - WVM11N80 MOSFET specs

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