WVM11N80 Datasheet and Replacement
Type Designator: WVM11N80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 230 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: TO3
WVM11N80 substitution
WVM11N80 Datasheet (PDF)
wvm11n80.pdf
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM11N80Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power source co
Datasheet: PSMN013-100YSE , PSMN013-30MLC , PSMN015-60BS , PSMN016-100BS , WPH4003 , WT3139K , WTC3401 , WTX1013 , IRFP250N , WVM12N10 , WVM13N50 , WVM15N20 , WVM15N40 , WVM15N45 , WVM15N50 , WVM15N60 , WVM18N20 .
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