All MOSFET. WVM21N50 Datasheet

 

WVM21N50 Datasheet and Replacement


   Type Designator: WVM21N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 21 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   ton ⓘ - Turn-on Time: 120 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
   Package: TO3
 

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WVM21N50 Datasheet (PDF)

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WVM21N50

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM21N50(IRF460)Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power s

Datasheet: WVM15N20 , WVM15N40 , WVM15N45 , WVM15N50 , WVM15N60 , WVM18N20 , WVM20N50 , WVM20N8 , K4145 , WVM25N40 , WVM28N10 , WVM3.9N100 , WVM30N10 , WVM30N20 , WVM30N30 , WVM3N10 , WVM3N30 .

History: IRF7475 | WVM13N50 | WVM15N45 | WVM30N20 | IRF7488 | WMK030N06LG4 | WVM28N10

Keywords - WVM21N50 MOSFET datasheet

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