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WVM21N50 Specs and Replacement

Type Designator: WVM21N50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

ton ⓘ - Turn-on Time: 120 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm

Package: TO3

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WVM21N50 datasheet

 ..1. Size:23K  shaanxi
 wvm21n50.pdf pdf_icon

WVM21N50

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China WVM21N50(IRF460) Power MOSFET(N-channel) Transistor Features 1. It s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards QZJ840611 3. Use for high speed switch, circuit of power s... See More ⇒

Detailed specifications: WVM15N20, WVM15N40, WVM15N45, WVM15N50, WVM15N60, WVM18N20, WVM20N50, WVM20N8, 2N7002, WVM25N40, WVM28N10, WVM3.9N100, WVM30N10, WVM30N20, WVM30N30, WVM3N10, WVM3N30

Keywords - WVM21N50 MOSFET specs

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