WVM25N40 Specs and Replacement
Type Designator: WVM25N40
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
ton ⓘ - Turn-on Time: 140 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO3
WVM25N40 substitution
- MOSFET ⓘ Cross-Reference Search
WVM25N40 datasheet
wvm25n40.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China WVM25N(IRF360) Power MOSFET(N-channel) Transistor Features 1. It s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards QZJ840611 3. Use for high speed switch, circuit of power sou... See More ⇒
Detailed specifications: WVM15N40, WVM15N45, WVM15N50, WVM15N60, WVM18N20, WVM20N50, WVM20N8, WVM21N50, IRF9540N, WVM28N10, WVM3.9N100, WVM30N10, WVM30N20, WVM30N30, WVM3N10, WVM3N30, WVM40N20
Keywords - WVM25N40 MOSFET specs
WVM25N40 cross reference
WVM25N40 equivalent finder
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WVM25N40 substitution
WVM25N40 replacement
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History: NCE80T420F
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