WVM3N30 Specs and Replacement
Type Designator: WVM3N30
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
Package: TO3
WVM3N30 substitution
- MOSFET ⓘ Cross-Reference Search
WVM3N30 datasheet
wvm3n30.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China WVM3N30(New) Power MOSFET(N-channel) Transistor Features 1. It s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards GJB33A-97, QZJ840611 3. Use for high speed switch, circuit of ... See More ⇒
wvm3n10.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China WVM3N10 Power MOSFET(N-channel) Transistor Features 1. It s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards QZJ840611 3. Use for high speed switch, circuit of power source con... See More ⇒
Detailed specifications: WVM21N50, WVM25N40, WVM28N10, WVM3.9N100, WVM30N10, WVM30N20, WVM30N30, WVM3N10, SPP20N60C3, WVM40N20, WVM4N20, WVM4N50, WVM55N10, WVM6N100, WVM7N12, WVM8N20, WVM8N60
Keywords - WVM3N30 MOSFET specs
WVM3N30 cross reference
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WVM3N30 replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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