All MOSFET. WVM55N10 Datasheet

 

WVM55N10 Datasheet and Replacement


   Type Designator: WVM55N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   ton ⓘ - Turn-on Time: 350 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO3
 

 WVM55N10 substitution

   - MOSFET ⓘ Cross-Reference Search

 

WVM55N10 Datasheet (PDF)

 ..1. Size:23K  shaanxi
 wvm55n10.pdf pdf_icon

WVM55N10

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM55N10(MTM55N10) Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of powe

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Keywords - WVM55N10 MOSFET datasheet

 WVM55N10 cross reference
 WVM55N10 equivalent finder
 WVM55N10 lookup
 WVM55N10 substitution
 WVM55N10 replacement

 

 
Back to Top

 


 
.