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WVM55N10 Specs and Replacement

Type Designator: WVM55N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

ton ⓘ - Turn-on Time: 350 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TO3

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WVM55N10 datasheet

 ..1. Size:23K  shaanxi
 wvm55n10.pdf pdf_icon

WVM55N10

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China WVM55N10(MTM55N10) Power MOSFET(N-channel) Transistor Features 1. It s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards QZJ840611 3. Use for high speed switch, circuit of powe... See More ⇒

Detailed specifications: WVM30N10, WVM30N20, WVM30N30, WVM3N10, WVM3N30, WVM40N20, WVM4N20, WVM4N50, AON7410, WVM6N100, WVM7N12, WVM8N20, WVM8N60, WVM9.5N100, WW459, XN0NE92, PSMN017-30BL

Keywords - WVM55N10 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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