All MOSFET. WVM55N10 Datasheet

 

WVM55N10 Datasheet and Replacement


   Type Designator: WVM55N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   ton ⓘ - Turn-on Time: 350 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO3
 

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WVM55N10 Datasheet (PDF)

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WVM55N10

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM55N10(MTM55N10) Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of powe

Datasheet: WVM30N10 , WVM30N20 , WVM30N30 , WVM3N10 , WVM3N30 , WVM40N20 , WVM4N20 , WVM4N50 , RFP50N06 , WVM6N100 , WVM7N12 , WVM8N20 , WVM8N60 , WVM9.5N100 , WW459 , XN0NE92 , PSMN017-30BL .

History: IRF3305B

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