All MOSFET. WVM6N100 Datasheet

 

WVM6N100 Datasheet and Replacement


   Type Designator: WVM6N100
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO3
 

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WVM6N100 Datasheet (PDF)

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WVM6N100

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM6N100Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power source co

Datasheet: WVM30N20 , WVM30N30 , WVM3N10 , WVM3N30 , WVM40N20 , WVM4N20 , WVM4N50 , WVM55N10 , 4N60 , WVM7N12 , WVM8N20 , WVM8N60 , WVM9.5N100 , WW459 , XN0NE92 , PSMN017-30BL , PSMN017-30EL .

History: MS20N04NE | APT10035B2LL | STD30NF03L | XGP6510B | IPG20N04S4-08 | SI2323DDS-T1-GE3 | UTT150N03

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