WVM6N100 Specs and Replacement
Type Designator: WVM6N100
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO3
WVM6N100 substitution
- MOSFET ⓘ Cross-Reference Search
WVM6N100 datasheet
wvm6n100.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China WVM6N100 Power MOSFET(N-channel) Transistor Features 1. It s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards QZJ840611 3. Use for high speed switch, circuit of power source co... See More ⇒
Detailed specifications: WVM30N20, WVM30N30, WVM3N10, WVM3N30, WVM40N20, WVM4N20, WVM4N50, WVM55N10, 12N60, WVM7N12, WVM8N20, WVM8N60, WVM9.5N100, WW459, XN0NE92, PSMN017-30BL, PSMN017-30EL
Keywords - WVM6N100 MOSFET specs
WVM6N100 cross reference
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WVM6N100 replacement
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