WVM8N20 Datasheet and Replacement
Type Designator: WVM8N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
ton ⓘ - Turn-on Time: 50 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO3
WVM8N20 substitution
WVM8N20 Datasheet (PDF)
wvm8n20.pdf

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM8N20(IRF232)Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power so
wvm8n60.pdf

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM8N60(MTM8N60) Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power
Datasheet: WVM3N10 , WVM3N30 , WVM40N20 , WVM4N20 , WVM4N50 , WVM55N10 , WVM6N100 , WVM7N12 , TK10A60D , WVM8N60 , WVM9.5N100 , WW459 , XN0NE92 , PSMN017-30BL , PSMN017-30EL , PSMN017-30PL , PSMN017-80BS .
History: IRFP048PBF | SFS9Z14 | CJAC75SN10 | 2SK2542 | HM4412A | WMB50P04TS | APM3054NUC
Keywords - WVM8N20 MOSFET datasheet
WVM8N20 cross reference
WVM8N20 equivalent finder
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WVM8N20 substitution
WVM8N20 replacement
History: IRFP048PBF | SFS9Z14 | CJAC75SN10 | 2SK2542 | HM4412A | WMB50P04TS | APM3054NUC



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