WVM8N60 Specs and Replacement
Type Designator: WVM8N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 160 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO3
WVM8N60 substitution
- MOSFET ⓘ Cross-Reference Search
WVM8N60 datasheet
wvm8n60.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China WVM8N60(MTM8N60) Power MOSFET(N-channel) Transistor Features 1. It s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards QZJ840611 3. Use for high speed switch, circuit of power ... See More ⇒
wvm8n20.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China WVM8N20(IRF232) Power MOSFET(N-channel) Transistor Features 1. It s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards QZJ840611 3. Use for high speed switch, circuit of power so... See More ⇒
Detailed specifications: WVM3N30, WVM40N20, WVM4N20, WVM4N50, WVM55N10, WVM6N100, WVM7N12, WVM8N20, IRFB3607, WVM9.5N100, WW459, XN0NE92, PSMN017-30BL, PSMN017-30EL, PSMN017-30PL, PSMN017-80BS, PSMN020-150W
Keywords - WVM8N60 MOSFET specs
WVM8N60 cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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