All MOSFET. WVM8N60 Datasheet

 

WVM8N60 Datasheet and Replacement


   Type Designator: WVM8N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 160 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: TO3
 

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WVM8N60 Datasheet (PDF)

 ..1. Size:23K  shaanxi
 wvm8n60.pdf pdf_icon

WVM8N60

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM8N60(MTM8N60) Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power

 9.1. Size:23K  shaanxi
 wvm8n20.pdf pdf_icon

WVM8N60

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM8N20(IRF232)Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power so

Datasheet: WVM3N30 , WVM40N20 , WVM4N20 , WVM4N50 , WVM55N10 , WVM6N100 , WVM7N12 , WVM8N20 , AON7506 , WVM9.5N100 , WW459 , XN0NE92 , PSMN017-30BL , PSMN017-30EL , PSMN017-30PL , PSMN017-80BS , PSMN020-150W .

History: RU2H30R

Keywords - WVM8N60 MOSFET datasheet

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