WVM8N60 PDF and Equivalents Search

 

WVM8N60 Specs and Replacement

Type Designator: WVM8N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 160 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: TO3

WVM8N60 substitution

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WVM8N60 datasheet

 ..1. Size:23K  shaanxi
wvm8n60.pdf pdf_icon

WVM8N60

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China WVM8N60(MTM8N60) Power MOSFET(N-channel) Transistor Features 1. It s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards QZJ840611 3. Use for high speed switch, circuit of power ... See More ⇒

 9.1. Size:23K  shaanxi
wvm8n20.pdf pdf_icon

WVM8N60

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China WVM8N20(IRF232) Power MOSFET(N-channel) Transistor Features 1. It s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards QZJ840611 3. Use for high speed switch, circuit of power so... See More ⇒

Detailed specifications: WVM3N30, WVM40N20, WVM4N20, WVM4N50, WVM55N10, WVM6N100, WVM7N12, WVM8N20, IRFB3607, WVM9.5N100, WW459, XN0NE92, PSMN017-30BL, PSMN017-30EL, PSMN017-30PL, PSMN017-80BS, PSMN020-150W

Keywords - WVM8N60 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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