WVM9.5N100 Specs and Replacement
Type Designator: WVM9.5N100
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 230 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
Package: TO3
WVM9.5N100 substitution
- MOSFET ⓘ Cross-Reference Search
WVM9.5N100 datasheet
wvm9.5n100.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China WVM9.5N100 Power MOSFET(N-channel) Transistor Features 1. It s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards QZJ840611 3. Use for high speed switch, circuit of power source ... See More ⇒
Detailed specifications: WVM40N20, WVM4N20, WVM4N50, WVM55N10, WVM6N100, WVM7N12, WVM8N20, WVM8N60, AON6380, WW459, XN0NE92, PSMN017-30BL, PSMN017-30EL, PSMN017-30PL, PSMN017-80BS, PSMN020-150W, PSMN020-30MLC
Keywords - WVM9.5N100 MOSFET specs
WVM9.5N100 cross reference
WVM9.5N100 equivalent finder
WVM9.5N100 pdf lookup
WVM9.5N100 substitution
WVM9.5N100 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
🌐 : EN ES РУ
LIST
Last Update
MOSFET: AUN084N10 | AUN065N10 | AUN063N10 | AUN062N08BG | AUN060N08AG | AUN053N10 | AUN050N08BGL | AUN045N085 | AUN042N055 | AUN036N10
Popular searches
2n2907a datasheet | irfz24n | bd135 | d880 | 2n5457 equivalent | 2sc945 replacement | 9014 transistor | irfp260n datasheet