All MOSFET. WVM9.5N100 Datasheet

 

WVM9.5N100 Datasheet and Replacement


   Type Designator: WVM9.5N100
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO3
 

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WVM9.5N100 Datasheet (PDF)

 ..1. Size:22K  shaanxi
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WVM9.5N100

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM9.5N100Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power source

Datasheet: WVM40N20 , WVM4N20 , WVM4N50 , WVM55N10 , WVM6N100 , WVM7N12 , WVM8N20 , WVM8N60 , AON7506 , WW459 , XN0NE92 , PSMN017-30BL , PSMN017-30EL , PSMN017-30PL , PSMN017-80BS , PSMN020-150W , PSMN020-30MLC .

History: STD4NK60Z-1 | CJAC80N03 | CJAC90SN12 | WVM7N12 | AP01N60P | 2SK2958S | CJAC70N03

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