PSMN2R0-30YLE PDF and Equivalents Search

 

PSMN2R0-30YLE Specs and Replacement

Type Designator: PSMN2R0-30YLE

Marking Code: 2R030

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 272 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 0.5 V

Qg ⓘ - Total Gate Charge: 87 nC

tr ⓘ - Rise Time: 55.7 nS

Cossⓘ - Output Capacitance: 1015 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm

Package: LFPAK

PSMN2R0-30YLE substitution

- MOSFET ⓘ Cross-Reference Search

 

PSMN2R0-30YLE datasheet

 ..1. Size:221K  nxp
psmn2r0-30yle.pdf pdf_icon

PSMN2R0-30YLE

PSMN2R0-30YLE N-channel 30 V 2 m logic level MOSFET in LFPAK 12 October 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Enhanced forward biased safe op... See More ⇒

 2.1. Size:238K  philips
psmn2r0-30yl.pdf pdf_icon

PSMN2R0-30YLE

PSMN2R0-30YL N-channel 30 V 2 m logic level MOSFET in LFPAK Rev. 4 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits... See More ⇒

 2.2. Size:823K  nxp
psmn2r0-30yl.pdf pdf_icon

PSMN2R0-30YLE

PSMN2R0-30YL N-channel 30 V 2 m logic level MOSFET in LFPAK Rev. 4 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits... See More ⇒

 2.3. Size:230K  nxp
psmn2r0-30yld.pdf pdf_icon

PSMN2R0-30YLE

PSMN2R0-30YLD N-channel 30 V, 2.0 m logic level MOSFET in LFPAK56 using NextPowerS3 Technology 11 December 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFET... See More ⇒

Detailed specifications: PSMN1R5-30BLE, PSMN1R6-30BL, PSMN1R6-40YLC, PSMN1R8-30BL, PSMN1R8-40YLC, PSMN1R9-40PL, PSMN2R0-30BL, PSMN2R0-30YLD, IRF830, PSMN2R1-40PL, PSMN2R2-40BS, PSMN2R4-30MLD, PSMN2R4-30YLD, PSMN2R5-60PL, PSMN2R6-60PS, PSMN2R7-30BL, PSMN2R8-25MLC

Keywords - PSMN2R0-30YLE MOSFET specs

 PSMN2R0-30YLE cross reference

 PSMN2R0-30YLE equivalent finder

 PSMN2R0-30YLE pdf lookup

 PSMN2R0-30YLE substitution

 PSMN2R0-30YLE replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

↑ Back to Top
.