Справочник MOSFET. PSMN2R0-30YLE

 

PSMN2R0-30YLE MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: PSMN2R0-30YLE
   Маркировка: 2R030
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 272 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 0.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 87 nC
   trⓘ - Время нарастания: 55.7 ns
   Cossⓘ - Выходная емкость: 1015 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.002 Ohm
   Тип корпуса: LFPAK

 Аналог (замена) для PSMN2R0-30YLE

 

 

PSMN2R0-30YLE Datasheet (PDF)

 ..1. Size:221K  nxp
 psmn2r0-30yle.pdf

PSMN2R0-30YLE PSMN2R0-30YLE

PSMN2R0-30YLEN-channel 30 V 2 m logic level MOSFET in LFPAK12 October 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in LFPAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.1.2 Features and benefits Enhanced forward biased safe op

 2.1. Size:238K  philips
 psmn2r0-30yl.pdf

PSMN2R0-30YLE PSMN2R0-30YLE

PSMN2R0-30YLN-channel 30 V 2 m logic level MOSFET in LFPAKRev. 4 10 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefits

 2.2. Size:823K  nxp
 psmn2r0-30yl.pdf

PSMN2R0-30YLE PSMN2R0-30YLE

PSMN2R0-30YLN-channel 30 V 2 m logic level MOSFET in LFPAKRev. 4 10 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefits

 2.3. Size:230K  nxp
 psmn2r0-30yld.pdf

PSMN2R0-30YLE PSMN2R0-30YLE

PSMN2R0-30YLDN-channel 30 V, 2.0 m logic level MOSFET in LFPAK56using NextPowerS3 Technology11 December 2014 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising NXPs unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSFET

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