All MOSFET. PSMN2R7-30BL Datasheet

 

PSMN2R7-30BL MOSFET. Datasheet pdf. Equivalent


   Type Designator: PSMN2R7-30BL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 170 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.15 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 66 nC
   trⓘ - Rise Time: 82 nS
   Cossⓘ - Output Capacitance: 822 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: D2PAK

 PSMN2R7-30BL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PSMN2R7-30BL Datasheet (PDF)

 ..1. Size:227K  nxp
psmn2r7-30bl.pdf

PSMN2R7-30BL
PSMN2R7-30BL

PSMN2R7-30BLN-channel 30 V 3.0 m logic level MOSFET in D2PAKRev. 1 21 March 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due

 ..2. Size:254K  inchange semiconductor
psmn2r7-30bl.pdf

PSMN2R7-30BL
PSMN2R7-30BL

isc N-Channel MOSFET Transistor PSMN2R7-30BLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 3.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 4.1. Size:217K  philips
psmn2r7-30pl.pdf

PSMN2R7-30BL
PSMN2R7-30BL

PSMN2R7-30PLN-channel 30 V 2.7 m logic level MOSFET in TO-220Rev. 02 2 November 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency du

 4.2. Size:813K  nxp
psmn2r7-30pl.pdf

PSMN2R7-30BL
PSMN2R7-30BL

PSMN2R7-30PLN-channel 30 V 2.7 m logic level MOSFET in TO-220Rev. 02 2 November 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency du

 4.3. Size:261K  inchange semiconductor
psmn2r7-30pl.pdf

PSMN2R7-30BL
PSMN2R7-30BL

isc N-Channel MOSFET Transistor PSMN2R7-30PLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 2.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FDP8880

 

 
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