PSMN2R7-30BL - Даташиты. Аналоги. Основные параметры
Наименование производителя: PSMN2R7-30BL
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 170 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 82 ns
Cossⓘ - Выходная емкость: 822 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.003 Ohm
Тип корпуса: D2PAK
Аналог (замена) для PSMN2R7-30BL
PSMN2R7-30BL Datasheet (PDF)
psmn2r7-30bl.pdf

PSMN2R7-30BLN-channel 30 V 3.0 m logic level MOSFET in D2PAKRev. 1 21 March 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due
psmn2r7-30bl.pdf

isc N-Channel MOSFET Transistor PSMN2R7-30BLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 3.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
psmn2r7-30pl.pdf

PSMN2R7-30PLN-channel 30 V 2.7 m logic level MOSFET in TO-220Rev. 02 2 November 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency du
psmn2r7-30pl.pdf

PSMN2R7-30PLN-channel 30 V 2.7 m logic level MOSFET in TO-220Rev. 02 2 November 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency du
Другие MOSFET... PSMN2R0-30YLD , PSMN2R0-30YLE , PSMN2R1-40PL , PSMN2R2-40BS , PSMN2R4-30MLD , PSMN2R4-30YLD , PSMN2R5-60PL , PSMN2R6-60PS , AON7403 , PSMN2R8-25MLC , PSMN2R8-40BS , PSMN2R8-80BS , PSMN2R9-30MLC , PSMN3R0-30MLC , PSMN3R0-30YLD , PSMN3R0-60BS , PSMN3R3-60PL .
History: 2SK2819 | IXTM13N80 | MSAEZ50N10A | WM02P41M | IPB65R115CFD7A | IPC100N04S5-2R8 | NDB608B
History: 2SK2819 | IXTM13N80 | MSAEZ50N10A | WM02P41M | IPB65R115CFD7A | IPC100N04S5-2R8 | NDB608B



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