PSMN2R7-30BL. Аналоги и основные параметры
Наименование производителя: PSMN2R7-30BL
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 170 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 82 ns
Cossⓘ - Выходная емкость: 822 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.003 Ohm
Тип корпуса: D2PAK
Аналог (замена) для PSMN2R7-30BL
- подборⓘ MOSFET транзистора по параметрам
PSMN2R7-30BL даташит
psmn2r7-30bl.pdf
PSMN2R7-30BL N-channel 30 V 3.0 m logic level MOSFET in D2PAK Rev. 1 21 March 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due
psmn2r7-30bl.pdf
isc N-Channel MOSFET Transistor PSMN2R7-30BL FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 3.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general
psmn2r7-30pl.pdf
PSMN2R7-30PL N-channel 30 V 2.7 m logic level MOSFET in TO-220 Rev. 02 2 November 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency du
psmn2r7-30pl.pdf
PSMN2R7-30PL N-channel 30 V 2.7 m logic level MOSFET in TO-220 Rev. 02 2 November 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency du
Другие MOSFET... PSMN2R0-30YLD , PSMN2R0-30YLE , PSMN2R1-40PL , PSMN2R2-40BS , PSMN2R4-30MLD , PSMN2R4-30YLD , PSMN2R5-60PL , PSMN2R6-60PS , RU7088R , PSMN2R8-25MLC , PSMN2R8-40BS , PSMN2R8-80BS , PSMN2R9-30MLC , PSMN3R0-30MLC , PSMN3R0-30YLD , PSMN3R0-60BS , PSMN3R3-60PL .
History: TPC8110 | 2P524A9
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