Справочник MOSFET. PSMN2R7-30BL

 

PSMN2R7-30BL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: PSMN2R7-30BL
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 170 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 2.15 V
   Максимально допустимый постоянный ток стока |Id|: 100 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 66 nC
   Время нарастания (tr): 82 ns
   Выходная емкость (Cd): 822 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.003 Ohm
   Тип корпуса: D2PAK

 Аналог (замена) для PSMN2R7-30BL

 

 

PSMN2R7-30BL Datasheet (PDF)

 ..1. Size:227K  nxp
 psmn2r7-30bl.pdf

PSMN2R7-30BL PSMN2R7-30BL

PSMN2R7-30BLN-channel 30 V 3.0 m logic level MOSFET in D2PAKRev. 1 21 March 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due

 ..2. Size:254K  inchange semiconductor
 psmn2r7-30bl.pdf

PSMN2R7-30BL PSMN2R7-30BL

isc N-Channel MOSFET Transistor PSMN2R7-30BLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 3.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 4.1. Size:217K  philips
 psmn2r7-30pl.pdf

PSMN2R7-30BL PSMN2R7-30BL

PSMN2R7-30PLN-channel 30 V 2.7 m logic level MOSFET in TO-220Rev. 02 2 November 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency du

 4.2. Size:813K  nxp
 psmn2r7-30pl.pdf

PSMN2R7-30BL PSMN2R7-30BL

PSMN2R7-30PLN-channel 30 V 2.7 m logic level MOSFET in TO-220Rev. 02 2 November 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency du

 4.3. Size:261K  inchange semiconductor
 psmn2r7-30pl.pdf

PSMN2R7-30BL PSMN2R7-30BL

isc N-Channel MOSFET Transistor PSMN2R7-30PLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 2.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

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