All MOSFET. PSMN4R3-100ES Datasheet

 

PSMN4R3-100ES Datasheet and Replacement


   Type Designator: PSMN4R3-100ES
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 338 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 91 nS
   Cossⓘ - Output Capacitance: 660 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm
   Package: I2PAK
 

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PSMN4R3-100ES Datasheet (PDF)

 ..1. Size:186K  nxp
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PSMN4R3-100ES

PSMN4R3-100ESN-channel 100 V 4.3 m standard level MOSFET in I2PAKRev. 1 31 October 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High ef

 3.1. Size:193K  nxp
psmn4r3-100ps.pdf pdf_icon

PSMN4R3-100ES

PSMN4R3-100PSN-channel 100 V 4.3 m standard level MOSFET in TO-220Rev. 1 27 October 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High

 6.1. Size:238K  philips
psmn4r3-80ps.pdf pdf_icon

PSMN4R3-100ES

PSMN4R3-80PSN-channel 80 V, 4.3 m standard level MOSFET in TO220Rev. 03 18 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency d

 6.2. Size:231K  philips
psmn4r3-80es.pdf pdf_icon

PSMN4R3-100ES

PSMN4R3-80ESN-channel 80 V, 4.3 m standard level MOSFET in I2PAKRev. 02 18 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency d

Datasheet: PSMN3R8-100BS , PSMN3R9-25MLC , PSMN3R9-60PS , PSMN3R9-60XS , PSMN4R0-30YLD , PSMN4R0-60YS , PSMN4R2-30MLD , PSMN4R2-60PL , IRF630 , PSMN4R3-100PS , PSMN4R3-30BL , PSMN4R3-80BS , PSMN4R4-30MLC , PSMN4R4-80BS , PSMN4R5-40BS , PSMN4R6-100XS , PSMN4R6-60BS .

History: RUH120N35M3 | IRFZ46ZS | BUZ171 | CS3N90FA9H | SFW025N100C3 | HUF75337S3 | FDI045N10A

Keywords - PSMN4R3-100ES MOSFET datasheet

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