PSMN4R3-100ES Specs and Replacement
Type Designator: PSMN4R3-100ES
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 338 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 91 nS
Cossⓘ - Output Capacitance: 660 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm
Package: I2PAK
PSMN4R3-100ES substitution
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PSMN4R3-100ES datasheet
psmn4r3-100es.pdf
PSMN4R3-100ES N-channel 100 V 4.3 m standard level MOSFET in I2PAK Rev. 1 31 October 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High ef... See More ⇒
psmn4r3-100ps.pdf
PSMN4R3-100PS N-channel 100 V 4.3 m standard level MOSFET in TO-220 Rev. 1 27 October 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High ... See More ⇒
psmn4r3-80ps.pdf
PSMN4R3-80PS N-channel 80 V, 4.3 m standard level MOSFET in TO220 Rev. 03 18 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency d... See More ⇒
psmn4r3-80es.pdf
PSMN4R3-80ES N-channel 80 V, 4.3 m standard level MOSFET in I2PAK Rev. 02 18 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency d... See More ⇒
Detailed specifications: PSMN3R8-100BS, PSMN3R9-25MLC, PSMN3R9-60PS, PSMN3R9-60XS, PSMN4R0-30YLD, PSMN4R0-60YS, PSMN4R2-30MLD, PSMN4R2-60PL, IRF640N, PSMN4R3-100PS, PSMN4R3-30BL, PSMN4R3-80BS, PSMN4R4-30MLC, PSMN4R4-80BS, PSMN4R5-40BS, PSMN4R6-100XS, PSMN4R6-60BS
Keywords - PSMN4R3-100ES MOSFET specs
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History: AP10TN003R
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