Справочник MOSFET. PSMN4R3-100ES

 

PSMN4R3-100ES Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: PSMN4R3-100ES
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 338 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 91 ns
   Cossⓘ - Выходная емкость: 660 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0043 Ohm
   Тип корпуса: I2PAK
 

 Аналог (замена) для PSMN4R3-100ES

   - подбор ⓘ MOSFET транзистора по параметрам

 

PSMN4R3-100ES Datasheet (PDF)

 ..1. Size:186K  nxp
psmn4r3-100es.pdfpdf_icon

PSMN4R3-100ES

PSMN4R3-100ESN-channel 100 V 4.3 m standard level MOSFET in I2PAKRev. 1 31 October 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High ef

 3.1. Size:193K  nxp
psmn4r3-100ps.pdfpdf_icon

PSMN4R3-100ES

PSMN4R3-100PSN-channel 100 V 4.3 m standard level MOSFET in TO-220Rev. 1 27 October 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High

 6.1. Size:238K  philips
psmn4r3-80ps.pdfpdf_icon

PSMN4R3-100ES

PSMN4R3-80PSN-channel 80 V, 4.3 m standard level MOSFET in TO220Rev. 03 18 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency d

 6.2. Size:231K  philips
psmn4r3-80es.pdfpdf_icon

PSMN4R3-100ES

PSMN4R3-80ESN-channel 80 V, 4.3 m standard level MOSFET in I2PAKRev. 02 18 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency d

Другие MOSFET... PSMN3R8-100BS , PSMN3R9-25MLC , PSMN3R9-60PS , PSMN3R9-60XS , PSMN4R0-30YLD , PSMN4R0-60YS , PSMN4R2-30MLD , PSMN4R2-60PL , IRF630 , PSMN4R3-100PS , PSMN4R3-30BL , PSMN4R3-80BS , PSMN4R4-30MLC , PSMN4R4-80BS , PSMN4R5-40BS , PSMN4R6-100XS , PSMN4R6-60BS .

History: AUIRF7379Q | IRFAC32 | SI7107DN | RU40C40L4 | IRLU3714 | SI7405BDN | MDP10N027TH

 

 
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