PSMN4R3-100ES - описание и поиск аналогов

 

PSMN4R3-100ES. Аналоги и основные параметры

Наименование производителя: PSMN4R3-100ES

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 338 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 91 ns

Cossⓘ - Выходная емкость: 660 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0043 Ohm

Тип корпуса: I2PAK

Аналог (замена) для PSMN4R3-100ES

- подборⓘ MOSFET транзистора по параметрам

 

PSMN4R3-100ES даташит

 ..1. Size:186K  nxp
psmn4r3-100es.pdfpdf_icon

PSMN4R3-100ES

PSMN4R3-100ES N-channel 100 V 4.3 m standard level MOSFET in I2PAK Rev. 1 31 October 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High ef

 3.1. Size:193K  nxp
psmn4r3-100ps.pdfpdf_icon

PSMN4R3-100ES

PSMN4R3-100PS N-channel 100 V 4.3 m standard level MOSFET in TO-220 Rev. 1 27 October 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High

 6.1. Size:238K  philips
psmn4r3-80ps.pdfpdf_icon

PSMN4R3-100ES

PSMN4R3-80PS N-channel 80 V, 4.3 m standard level MOSFET in TO220 Rev. 03 18 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency d

 6.2. Size:231K  philips
psmn4r3-80es.pdfpdf_icon

PSMN4R3-100ES

PSMN4R3-80ES N-channel 80 V, 4.3 m standard level MOSFET in I2PAK Rev. 02 18 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency d

Другие MOSFET... PSMN3R8-100BS , PSMN3R9-25MLC , PSMN3R9-60PS , PSMN3R9-60XS , PSMN4R0-30YLD , PSMN4R0-60YS , PSMN4R2-30MLD , PSMN4R2-60PL , IRF640N , PSMN4R3-100PS , PSMN4R3-30BL , PSMN4R3-80BS , PSMN4R4-30MLC , PSMN4R4-80BS , PSMN4R5-40BS , PSMN4R6-100XS , PSMN4R6-60BS .

 

 

 

 

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