All MOSFET. PSMN4R3-80BS Datasheet

 

PSMN4R3-80BS Datasheet and Replacement


   Type Designator: PSMN4R3-80BS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 306 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 28.6 nS
   Cossⓘ - Output Capacitance: 701 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm
   Package: D2PAK
 

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PSMN4R3-80BS Datasheet (PDF)

 ..1. Size:371K  nxp
 psmn4r3-80bs.pdf pdf_icon

PSMN4R3-80BS

PSMN4R3-80BSN-channel 80 V, 4.3 m standard level MOSFET in D2PAKRev. 01 27 December 2010 Objective data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effi

 4.1. Size:238K  philips
 psmn4r3-80ps.pdf pdf_icon

PSMN4R3-80BS

PSMN4R3-80PSN-channel 80 V, 4.3 m standard level MOSFET in TO220Rev. 03 18 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency d

 4.2. Size:231K  philips
 psmn4r3-80es.pdf pdf_icon

PSMN4R3-80BS

PSMN4R3-80ESN-channel 80 V, 4.3 m standard level MOSFET in I2PAKRev. 02 18 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency d

 4.3. Size:821K  nxp
 psmn4r3-80ps.pdf pdf_icon

PSMN4R3-80BS

PSMN4R3-80PSN-channel 80 V, 4.3 m standard level MOSFET in TO220Rev. 03 18 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency d

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Datasheet: PSMN3R9-60XS , PSMN4R0-30YLD , PSMN4R0-60YS , PSMN4R2-30MLD , PSMN4R2-60PL , PSMN4R3-100ES , PSMN4R3-100PS , PSMN4R3-30BL , AON6414A , PSMN4R4-30MLC , PSMN4R4-80BS , PSMN4R5-40BS , PSMN4R6-100XS , PSMN4R6-60BS , PSMN4R8-100BSE , PSMN4R8-100PSE , PSMN5R0-100XS .

History: FTU04N60B | HUF75337S3 | 50N06G-TF3T-T | 2SK1487 | SFW025N100C3 | IRFZ46ZS | STB15NM60N

Keywords - PSMN4R3-80BS MOSFET datasheet

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