PSMN4R3-80BS MOSFET. Datasheet pdf. Equivalent

   Type Designator: PSMN4R3-80BS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 306 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 28.6 nS
   Cossⓘ - Output Capacitance: 701 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm
   Package: D2PAK

PSMN4R3-80BS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

PSMN4R3-80BS Datasheet (PDF)

..1. Size:371K nxp
psmn4r3-80bs.pdf

PSMN4R3-80BSN-channel 80 V, 4.3 m standard level MOSFET in D2PAKRev. 01 27 December 2010 Objective data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effi

4.1. Size:238K philips
psmn4r3-80ps.pdf

PSMN4R3-80PSN-channel 80 V, 4.3 m standard level MOSFET in TO220Rev. 03 18 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency d

4.2. Size:231K philips
psmn4r3-80es.pdf

PSMN4R3-80ESN-channel 80 V, 4.3 m standard level MOSFET in I2PAKRev. 02 18 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency d

4.3. Size:821K nxp
psmn4r3-80ps.pdf