Справочник MOSFET. PSMN4R3-80BS

 

PSMN4R3-80BS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: PSMN4R3-80BS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 306 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 104 nC
   trⓘ - Время нарастания: 28.6 ns
   Cossⓘ - Выходная емкость: 701 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0043 Ohm
   Тип корпуса: D2PAK

 Аналог (замена) для PSMN4R3-80BS

 

 

PSMN4R3-80BS Datasheet (PDF)

 ..1. Size:371K  nxp
psmn4r3-80bs.pdf

PSMN4R3-80BS
PSMN4R3-80BS

PSMN4R3-80BSN-channel 80 V, 4.3 m standard level MOSFET in D2PAKRev. 01 27 December 2010 Objective data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effi

 4.1. Size:238K  philips
psmn4r3-80ps.pdf

PSMN4R3-80BS
PSMN4R3-80BS

PSMN4R3-80PSN-channel 80 V, 4.3 m standard level MOSFET in TO220Rev. 03 18 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency d

 4.2. Size:231K  philips
psmn4r3-80es.pdf

PSMN4R3-80BS
PSMN4R3-80BS

PSMN4R3-80ESN-channel 80 V, 4.3 m standard level MOSFET in I2PAKRev. 02 18 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency d

 4.3. Size:821K  nxp
psmn4r3-80ps.pdf

PSMN4R3-80BS
PSMN4R3-80BS

PSMN4R3-80PSN-channel 80 V, 4.3 m standard level MOSFET in TO220Rev. 03 18 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency d

 4.4. Size:820K  nxp
psmn4r3-80es.pdf

PSMN4R3-80BS
PSMN4R3-80BS

PSMN4R3-80ESN-channel 80 V, 4.3 m standard level MOSFET in I2PAKRev. 02 18 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency d

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