PSMN6R5-80BS MOSFET. Datasheet pdf. Equivalent
Type Designator: PSMN6R5-80BS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 210 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 100 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 61 nC
trⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 410 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0069 Ohm
Package: D2PAK
PSMN6R5-80BS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PSMN6R5-80BS Datasheet (PDF)
psmn6r5-80bs.pdf
PSMN6R5-80BSN-channel 80V 6.9m standard level MOSFET in D2PAKRev. 2 2 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency
psmn6r5-80ps.pdf
PSMN6R5-80PSN-channel 80 V 6.9 m standard level MOSFET in TO220Rev. 02 1 November 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien
psmn6r5-80ps.pdf
PSMN6R5-80PSN-channel 80 V 6.9 m standard level MOSFET in TO220Rev. 02 1 November 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien
psmn6r5-25ylc.pdf
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