Справочник MOSFET. PSMN6R5-80BS

 

PSMN6R5-80BS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: PSMN6R5-80BS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 210 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 61 nC
   trⓘ - Время нарастания: 24 ns
   Cossⓘ - Выходная емкость: 410 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0069 Ohm
   Тип корпуса: D2PAK

 Аналог (замена) для PSMN6R5-80BS

 

 

PSMN6R5-80BS Datasheet (PDF)

 ..1. Size:229K  nxp
 psmn6r5-80bs.pdf

PSMN6R5-80BS PSMN6R5-80BS

PSMN6R5-80BSN-channel 80V 6.9m standard level MOSFET in D2PAKRev. 2 2 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency

 4.1. Size:222K  philips
 psmn6r5-80ps.pdf

PSMN6R5-80BS PSMN6R5-80BS

PSMN6R5-80PSN-channel 80 V 6.9 m standard level MOSFET in TO220Rev. 02 1 November 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien

 4.2. Size:818K  nxp
 psmn6r5-80ps.pdf

PSMN6R5-80BS PSMN6R5-80BS

PSMN6R5-80PSN-channel 80 V 6.9 m standard level MOSFET in TO220Rev. 02 1 November 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien

 6.1. Size:898K  nxp
 psmn6r5-25ylc.pdf

PSMN6R5-80BS PSMN6R5-80BS

PSMN6R5-25YLCN-channel 25 V 6.5 m logic level MOSFET in LFPAK using NextPower technologyRev. 2 31 October 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benef

 6.2. Size:286K  nxp
 psmn6r5-30mld.pdf

PSMN6R5-80BS PSMN6R5-80BS

PSMN6R5-30MLDN-channel 30 V, 6.5 m logic level MOSFET in LFPAK33 usingNextPowerS3 Technology21 January 2019 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in an LFPAK33 package. TheNextPowerS3 portfolio, utilising Nexperias unique SchottkyPlus technology, delivers highefficiency and the low spiking performance usually as

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