PSMN8R5-108ES Datasheet and Replacement. Cross Reference Search

PSMN8R5-108ES Datasheet (PDF)

..1. Size:231K nxp
psmn8r5-108es.pdf pdf_icon

PSMN8R5-108ESN-channel 108 V 8.5 m standard level MOSFET in I2PAK13 January 2014 Product data sheet1. General descriptionStandard level N-channel MOSFET in a I2PAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and co

4.1. Size:250K nxp
psmn8r5-100esf.pdf pdf_icon

PSMN8R5-100ESFNextPower 100 V, 8.8 m N-channel MOSFET in I2PAKpackage10 April 2017 Product data sheet1. General descriptionNextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency

4.2. Size:228K nxp
psmn8r5-100xs.pdf pdf_icon

PSMN8R5-100XSN-channel 100V 8.5 m standard level MOSFET in TO220F(SOT186A)29 November 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220F (SOT186A) package qualified to175C. This product is designed and qualified for use in a wide range of industrial,communications and domestic equipment.1.2 Features and benefits Hi

4.3. Size:220K nxp
psmn8r5-100es.pdf pdf_icon

PSMN8R5-100ESN-channel 100 V 8.5 m standard level MOSFET in I2PAK11 October 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a I2PAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.1.2 Features and benefits High efficiency due t