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PSMN8R5-108ES MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: PSMN8R5-108ES

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 263 W

Предельно допустимое напряжение сток-исток (Uds): 108 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 4 V

Максимально допустимый постоянный ток стока (Id): 100 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 111 nC

Время нарастания (tr): 35 ns

Выходная емкость (Cd): 380 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.0085 Ohm

Тип корпуса: I2PAK

Аналог (замена) для PSMN8R5-108ES

 

 

PSMN8R5-108ES Datasheet (PDF)

1.1. psmn8r5-108es.pdf Size:231K _update_mosfet

PSMN8R5-108ES
PSMN8R5-108ES

PSMN8R5-108ES N-channel 108 V 8.5 mΩ standard level MOSFET in I2PAK 13 January 2014 Product data sheet 1. General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • High efficiency due to low switching and co

1.2. psmn8r5-100xs.pdf Size:228K _update_mosfet

PSMN8R5-108ES
PSMN8R5-108ES

PSMN8R5-100XS N-channel 100V 8.5 mΩ standard level MOSFET in TO220F (SOT186A) 29 November 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits • Hi

 1.3. psmn8r5-100ps.pdf Size:250K _update_mosfet

PSMN8R5-108ES
PSMN8R5-108ES

PSMN8R5-100PS N-channel 100 V 8.5 mΩ standard level MOSFET in TO220 17 October 2013 Product data sheet 1. General description Standard level N-channel MOSFET in a TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • High efficiency due to low switching and co

1.4. psmn8r5-100es.pdf Size:220K _update_mosfet

PSMN8R5-108ES
PSMN8R5-108ES

PSMN8R5-100ES N-channel 100 V 8.5 mΩ standard level MOSFET in I2PAK 11 October 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits • High efficiency due t

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MOSFET: BUZ171 | BUZ12A | BUZ12 | BUZ11AL | BUZ111SL | BUZ111S | BUZ110S | BUZ10S2 | BUZ10L | BUZ104S | BUZ104L | BUZ104 | BUZ103SL | BUZ103S-4 | BUZ103 |
 


 

 

 

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