XP202A0003MR-G MOSFET. Datasheet pdf. Equivalent
Type Designator: XP202A0003MR-G
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.2 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 110 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: SOT-23
XP202A0003MR-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
XP202A0003MR-G Datasheet (PDF)
xp202a0003mr-g.pdf
XP202A0003MR-G ETR1128-003P-channel 4V (G-S) MOSFET FEATURES APPLICATIONS Low On Resistance Switching Ultra High Speed Switching 4V Driving EU RoHS Compliant, Pb Free PRODUCT NAME ORDER UNIT PRODUCT NAME PACKAGE XP202A0003MR-G SOT-23 3,000/Reel * The -G suffix indicates that the products are Halogen and Antimony free as well as being
xp202a0003pr-g.pdf
XP202A0003PR-G ETR1129-003P-channel 4V (G-S) MOSFET FEATURES APPLICATION Low On Resistance Switching Ultra High Speed Switching 4V Driving PRODUCT NAME EU RoHS Compliant, Pb Free ORDER UNIT PRODUCT NAME PACKAGE XP202A0003PR-G SOT-89 1,000/Reel * The -G suffix indicates that the products are Halogen and Antimony free as w
xp202a0003pr.pdf
XP202A0003PRwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.050 at VGS = - 10 V - 7.6 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.056 at VGS = - 4.5 V - 6.0APPLICATIONS Load Switch Battery SwitchDS G G D SD P-Channel MOSFET
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
