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YTF830 Specs and Replacement

Type Designator: YTF830

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm

Package: TO-220

YTF830 substitution

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YTF830 datasheet

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 ytf830.pdf pdf_icon

YTF830

YTF830 YTF830 Powered by ICminer.com Electronic-Library Service CopyRight 2003 Powered by ICminer.com Electronic-Library Service CopyRight 2003 ... See More ⇒

Detailed specifications: XP161, XP161A11A1PR-G, XP161A1265PR-G, XP161A1355PR-G, XP162A11C0PR-G, XP162A12A6PR-G, XP202A0003MR-G, XP202A0003PR-G, SI2302, 2SK1029, 2SK1197, 2SK1297, MMN400A006U1, MMN400A010U1, MMN600DB012B, MMN600DB015B, MMN668A010U1

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