2SK1197
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK1197
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 20
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 9
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.3
V
|Id|ⓘ - Maximum Drain Current: 0.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 4
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 10
Ohm
Package:
TO126
2SK1197
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK1197
Datasheet (PDF)
..1. Size:18K hitachi
2sk1197.pdf 
2SK1197Silicon N-Channel enhanced MOS FETApplicationHigh frequency amplifierFeatures High endurance capability against static electrical breakdown (C = 200pF) Between Gate from Source : 500 V Typ Between Drain from Source : 1000 V Min, 1500 V Typ Wide forward transfer admittance|yfs| = 150 mS Typ High breakdown voltage VDSS = 100V Small output capacitance
..2. Size:250K inchange semiconductor
2sk1197.pdf
isc N-Channel MOSFET Transistor 2SK1197FEATURESDrain Current I = 0.5A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.15(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
8.1. Size:41K 1
2sk1192.pdf
2SK1192External dimensions 2 ...... FM100Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 60 V V 60 V I = 250A, V = 0VDSS (BR) DSS D GSV 20 V I 500 nA V = 20VGSS GSS GSI 40 A I 250 A V = 60V, V = 0VD DSS DS GSI 160 (Tch 150C) A V 2.0 4.0 V V = 10V, I = 250AD
8.4. Size:33K no
2sk1191.pdf
2SK1191External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics(Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 60 V V 60 V I = 250A, V = 0VDSS (BR) DSS D GSV 20 V I 500 nA V = 20VGSS GSS GSI 30 A I 250 A V = 60V, V = 0VD DSS DS GSI 120 (Tch 150C) A V 2.0 4.0 V V = 10V, I = 250AD (p
8.5. Size:33K no
2sk1190.pdf
2SK1190External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics(Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 60 V V 60 V I = 250A, V = 0VDSS (BR) DSS D GSV 20 V I 500 nA V = 20VGSS GSS GSI 22 A I 250 A V = 60V, V = 0VD DSS DS GSI 88 (Tch 150C) A V 2.0 4.0 V V = 10V, I = 250AD (pu
8.6. Size:200K inchange semiconductor
2sk1199.pdf
isc N-Channel MOSFET Transistor 2SK1199DESCRIPTIONDrain Current I = 2A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and rel
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