Справочник MOSFET. 2SK1197

 

2SK1197 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK1197
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 20 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 9 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Cossⓘ - Выходная емкость: 4 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 10 Ohm
   Тип корпуса: TO126

 Аналог (замена) для 2SK1197

 

 

2SK1197 Datasheet (PDF)

 ..1. Size:18K  hitachi
 2sk1197.pdf

2SK1197 2SK1197

2SK1197Silicon N-Channel enhanced MOS FETApplicationHigh frequency amplifierFeatures High endurance capability against static electrical breakdown (C = 200pF) Between Gate from Source : 500 V Typ Between Drain from Source : 1000 V Min, 1500 V Typ Wide forward transfer admittance|yfs| = 150 mS Typ High breakdown voltage VDSS = 100V Small output capacitance

 ..2. Size:250K  inchange semiconductor
 2sk1197.pdf

2SK1197 2SK1197

isc N-Channel MOSFET Transistor 2SK1197FEATURESDrain Current I = 0.5A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.15(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 8.1. Size:41K  1
 2sk1192.pdf

2SK1197 2SK1197

2SK1192External dimensions 2 ...... FM100Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 60 V V 60 V I = 250A, V = 0VDSS (BR) DSS D GSV 20 V I 500 nA V = 20VGSS GSS GSI 40 A I 250 A V = 60V, V = 0VD DSS DS GSI 160 (Tch 150C) A V 2.0 4.0 V V = 10V, I = 250AD

 8.2. Size:313K  nec
 2sk1198.pdf

2SK1197 2SK1197

 8.3. Size:249K  hitachi
 2sk1199.pdf

2SK1197 2SK1197

 8.4. Size:33K  no
 2sk1191.pdf

2SK1197

2SK1191External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics(Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 60 V V 60 V I = 250A, V = 0VDSS (BR) DSS D GSV 20 V I 500 nA V = 20VGSS GSS GSI 30 A I 250 A V = 60V, V = 0VD DSS DS GSI 120 (Tch 150C) A V 2.0 4.0 V V = 10V, I = 250AD (p

 8.5. Size:33K  no
 2sk1190.pdf

2SK1197

2SK1190External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics(Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 60 V V 60 V I = 250A, V = 0VDSS (BR) DSS D GSV 20 V I 500 nA V = 20VGSS GSS GSI 22 A I 250 A V = 60V, V = 0VD DSS DS GSI 88 (Tch 150C) A V 2.0 4.0 V V = 10V, I = 250AD (pu

 8.6. Size:200K  inchange semiconductor
 2sk1199.pdf

2SK1197 2SK1197

isc N-Channel MOSFET Transistor 2SK1199DESCRIPTIONDrain Current I = 2A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and rel

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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